STMicroelectronics has introduced the STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches. The ...

The structure of an IGBT/power MOSFET is such that the gate forms a nonlinear capacitor. Charging the gate capacitor turns the power device on and allows current flow between its drain and source ...

This application note defines the fundamental behavior of MOSFETs, both as standalone devices and as switching devices implemented in a Switch Mode Power Supply (SMPS). Additional topics include the ...

Since the body contact and the source and drain junctions form pn junctions with the MOS gate, the charge pumping technique for the SOI MOSFET is related to SOI Lubistor operation. It is easily ...

Vishay Intertechnology, Inc. introduced a new 150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6×5) ...

STMicroelectronics introduces standard-threshold 40-V STripFET F8 MOSFETs, delivering enhanced trench-gate technology.

Vishay Intertechnology has introduced a150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6x5) package ...

STMicroelectronics latest gate driver brings new features for automotive motor drives cutting the costs of development.

The main functions of the gate driver IC that were optimised include the six-channel gate-driver structure, the extra gate-driver output to control the external MOSFET for reverse polarity protection, ...

Compared to previous-generation devices in the PowerPAK SO-8, the Vishay Siliconix SiRS5700DP slashes overall on-resistance ...

Toshiba Electronics Europe has started offering engineering samples of its TB9084FTG, a MOSFET gate driver IC.