STMicroelectronics has introduced the STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches. The ...
Description: Integrated Desaturation (VCE) Detection and Fault Status Feedback for IGBT VCE fault protection in a rugged, hermetically-sealed package. The devices are capable of operation and storage ...
Targeting mid-power products involving motor drives and energy-conversion systems, STMicro’s latest gate drivers for SiC ...
This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches. The Desaturation protection implements an overload and short-circuit ...
ST’s STGAP3S family of gate drivers for SiC and IGBT power switches combines ST’s latest galvanic isolation technology with optimised desaturation protection and flexible Miller-clamp architecture. ST ...
STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized desaturation protection ...
STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection ...
STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized desaturation protection ...
GENEVA, SWITZERLAND, November 7, 2024 /EINPresswire.com/ -- STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches ...